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| Datasheet File OCR Text: |
| Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 Tstg ----Storage Temperature.............................. -65~150 T j ----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 40W VCBO----Collector-Base Voltage................................. -100V VCEO----Collector-Emitter Voltage.............................. -100V VEBO----Emitter-Base Voltage....................................... -5V IC----Collector Current Pulse ....................................... -6A IC----Collector CurrentDC....................................... -4A IB----Base Current................................................-100mA TO-126F 1Emitter, E 2CollectorC 3BaseB ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO ICES *HFE *VCE(sat) VBE(on) VCEO(sus) Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage -200 -2 -500 750 -2.5 -2.5 -100 A mA A VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-100V, VEB=0 VCE=-3V, IC=-1.5mA IC=-1.5A, IB=-30mA VCE=-3V, IC=-1.5A IC=-50mA, IB=0 V V * Pulse Test:PW=300S,Duty Cycle=1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR HBD682 |
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